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2SK1530 |
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| Part Number | 2SK1530 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 2SK1530 High-Power Amplifier Application High breakdown voltage High forward transfer admittance Complementary to 2SJ201 : VDSS =... |
| Features |
ut capacitance Reverse transfer capacitance
IDSS IGSS V (BR) DSS VDS (ON) VGS (OFF) |Yfs| Ciss Coss Crss
VDS = 200 V, VGS = 0 VDS = 0V, VGS = ±20 V ID = 10 mA, VGS = 0 ID = 8 A, VGS = 10 V VDS = 10 V, ID = 0.1 A VDS = 10 V, ID = 5 A VDS = 30 V, VGS = 0, f = 1 MHz VDS = 30 V, VGS = 0, f = 1 MHz VDD = 30 V, VGS = 0, f = 1 MHz
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VGS (OFF) Classification
0: 0.8~1.6
This transistor is an electrostatic-sensitive device. Please handle with caution.
Y: 1.4~2.8
1
Min Typ. Max Unit
— — 1.0 mA
— — ±0.5 µA
200 —
—
V
— ... |
| Document |
 2SK1530 Data Sheet
PDF 232.78KB |
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