Toshiba Semiconductor D12 Hoja de datos

No.	parte #	Fabricante	Descripción
1	TC7WBD125FK	Toshiba Semiconductor	Dual Bus Switch • • • • • • Operating voltage: VCC = 4.5~5.5 V High speed operation: tpd = 0.25 ns (max) Ultra-low on resistance: RON = 5 Ω (typ.) Electro-static discharge (ESD) performance: ±200 V or more (JEITA) ±2000 V or more (MIL) TTL level input (control input
2	2SD1221	Toshiba Semiconductor	Silicon NPN Transistor rature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual r
3	2SD1220	Toshiba Semiconductor	Silicon NPN Transistor onductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-02-05 Electrical Characteristics (Ta = 25°C) Characteris
4	D1223	Toshiba Semiconductor	2SD1223 conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept
5	2SD1222	Toshiba Semiconductor	NPN TRANSISTOR
6	2SD1224	Toshiba Semiconductor	Silicon NPN Transistor tter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Mi
7	TC7WBD126AFK	Toshiba Semiconductor	Dual Bus Switch • Operating voltage: VCC = 4.5 to 5.5 V • High speed operation: tpd = 0.32 ns (max) • Ultra-low on resistance: RON = 5 Ω (typ.) • ESD performance: Machine model ≥ ±200 V Human body model ≥ ±2000 V • TTL level input (control input) • Low Power Dissipa
8	TC7WBD126FK	Toshiba Semiconductor	Dual Bus Switch • • • • • • Operating voltage: VCC = 4.5~5.5 V High speed operation: tpd = 0.25 ns (max) Ultra-low on resistance: RON = 5 Ω (typ.) Electro-static discharge (ESD) performance: ±200 V or more (JEITA) ±2000 V or more (MIL) TTL level input (control input
9	2SD1294	Toshiba Semiconductor	NPN Transistor
10	TC7WBD125AFK	Toshiba Semiconductor	Dual Bus Switch • Operating voltage: VCC = 4.5 to 5.5 V • High speed operation: tpd = 0.32 ns (max) • Ultra-low on resistance: RON = 5 Ω (typ.) • ESD performance: Machine model ≥ ±200 V Human body model ≥ ±2000 V • TTL level input (control input) • Low Power Dissipa
11	LTD121KA0S	Toshiba Semiconductor	31cm COLOUR TFT-LCD MODULE (1) (2) (3) (4) 12.1”XGA(1024x768 pixels) display size for Tablet PC Light weight and Thinner design LVDS interface system (H-Sync, V-Sync) Digitizer Easy Insertion & Assembly Solution TENTATIVE MECHANICAL SPECIFICATIONS Item Dimensional Outline (t
12	2SD1223	Toshiba Semiconductor	NPN TRANSISTOR conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept
13	D1294	Toshiba Semiconductor	2SD1294