Distributor | Stock | Price | Buy |
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2SD1223 |
Part Number | 2SD1223 |
Manufacturer | Toshiba Semiconductor |
Title | NPN TRANSISTOR |
Description | 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • • • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max. |
Features | conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE ≈ 4.5. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD1220 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1221 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
3 | 2SD1221 |
KEXIN |
NPN Transistors | |
4 | 2SD1222 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
5 | 2SD1224 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
6 | 2SD1225M |
Rohm |
NPN Transistor | |
7 | 2SD1226 |
Rohm |
Epitaxial Planar NPN Silicon Transistors | |
8 | 2SD1226M |
Rohm |
Epitaxial Planar NPN Silicon Transistors | |
9 | 2SD1227M |
Rohm |
Medium Power Transistor | |
10 | 2SD1228M |
Rohm |
NPN Transistor |