Toshiba Semiconductor C46 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C4688	Toshiba Semiconductor	2SC4688 bility upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2006-
2	2SC4682	Toshiba Semiconductor	NPN TRANSISTOR frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob VCB = 30 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 0.5 A VCE = 1 V, IC = 3 A IC = 3 A, IB = 30 mA VCE = 1
3	2SC4688	Toshiba Semiconductor	NPN TRANSISTOR bility upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2006-
4	C4686	Toshiba Semiconductor	2SC4686
5	2SC4605	Toshiba Semiconductor	NPN TRANSISTOR
6	2SC4666	Toshiba Semiconductor	Silicon NPN TRANSISTOR gn the appropriate reliability upon reviewing the Weight: 0.006 g (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
7	2SC4667	Toshiba Semiconductor	Silicon NPN TRANSISTOR urrent/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabilit
8	2SC4678	Toshiba Semiconductor	NPN TRANSISTOR
9	2SC4681	Toshiba Semiconductor	NPN TRANSISTOR r cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO VCEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condit
10	2SC4684	Toshiba Semiconductor	NPN TRANSISTOR ctrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output
11	2SC4685	Toshiba Semiconductor	NPN TRANSISTOR
12	2SC4686	Toshiba Semiconductor	NPN TRANSISTOR reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Han
13	2SC4686A	Toshiba Semiconductor	NPN TRANSISTOR reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Han
14	2SC4689	Toshiba Semiconductor	NPN TRANSISTOR sat) VBE fT Cob VCE = 5 V, IC = 4 A IC = 6 A, IB = 0.6 A VCE = 5 V, IC = 4 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification R: 55 to 110, O: 80 to 160 JEDEC ― JEITA ― TOSHIBA 2-16F1A Weight: 5.8 g (typ.) Min
15	2SC4690	Toshiba Semiconductor	NPN TRANSISTOR ) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliabili
16	2SC4604	Toshiba Semiconductor	NPN TRANSISTOR CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IE = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 2 A IC = 1.5 A, IB = 75 mA IC = 1.5 A, IB = 75 mA VCE = 2 V, IC = 100 mA VCB = 10 V,
17	2SC4679	Toshiba Semiconductor	NPN TRANSISTOR