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2SC4666 |
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| Part Number | 2SC4666 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High... |
| Features |
gn the appropriate reliability upon reviewing the
Weight: 0.006 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Transition frequency Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE (Note)
VCE = 6 V, IC = 2 ... |
| Document |
 2SC4666 Data Sheet
PDF 225.44KB |
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