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| Part Number | 2SC4662 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC4662 |
| Manufacturer | Sanken electric |
| Title | Silicon NPN Transistor |
| Description | 2SC4662 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4662 500 400 10 5(Pulse10) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator an. |
| Features |
2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) 2 I C – V BE Temperature Characteristics (Typical) (V C E =4V) 5 –55˚C Collector Current I C (A) 4 3 1 –55˚C. |
| Part Number | 2SC4662 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=. |
| Features | X UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 0.5 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 1.5A; IB= 0.3A VCB= 500V; IE= 0 1.3 V 100 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 100 μA hFE DC Current Gain IC= 1.5A; VCE= 4V 10 30 COB Output Capac. |
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Desde 2024. D4U Semiconductor.
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