Toshiba Semiconductor C33 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C3381	Toshiba Semiconductor	2SC3381
2	C3327	Toshiba Semiconductor	2SC3327
3	C3306	Toshiba Semiconductor	2SC3306
4	C3302	Toshiba Semiconductor	2SC3302
5	2SC3334	Toshiba Semiconductor	Silicon NPN Triple Diffused TRANSISTOR ithin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
6	C3376	Toshiba Semiconductor	2SC3376
7	2SC3306	Toshiba Semiconductor	NPN Transistor
8	2SC3303	Toshiba Semiconductor	SILICON NPN TRANSISTOR operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derat
9	2SC3333	Toshiba Semiconductor	Silicon NPN Triple Diffused TRANSISTOR = 20 V, IC = 25 mA IC = 10 mA, IB = 1 mA VCE = 20 V, IC = 25 mA VCE = 10 V, IC = 10 mA VCB = 30 V, IE = 0, f = 1 MHz JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 250 ¾ ¾ V 50 ¾ ¾
10	2SC3307	Toshiba Semiconductor	Silicon NPN Transistor ignificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handli
11	2SC3324	Toshiba Semiconductor	Silicon NPN TRANSISTOR the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Der
12	2SC3328	Toshiba Semiconductor	NPN TRANSISTOR oltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 µs IB1 Switching time Storage time tstg Input Test Condition VCB = 80 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2
13	2SC3329	Toshiba Semiconductor	Silicon NPN TRANSISTOR Collector-emitter saturation voltage Base-emitter voltage Base spreading resistance Transition frequency Collector output capacitance Noise figure ICBO IEBO V (BR) CEO VCB = 80 V, IE = 0 VEB = 5 V, IC = 0 IC = 1 mA, IB = 0 hFE VCE = 6 V, IC = 2 m
14	2SC3376	Toshiba Semiconductor	NPN TRIPLE DIFFUSED TRANSISTOR
15	2SC3381	Toshiba Semiconductor	NPN Transistor
16	TMP87C33N	Toshiba Semiconductor	CMOS 8-BIT MICROCONTROLLER
17	2SC3302	Toshiba Semiconductor	Silicon NPN Transistor . NF=1.5dB, 1 S21el 2=16.5dB (f=500MHz) . NF=1.7dB, IS 2 lel 2 =HdB (f=1000MHz) 2SC3302 Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 17 Collector-Emitter Voltage VCEO 12 4.2 MAX. Emit
18	2SC3325	Toshiba Semiconductor	Silicon NPN Transistor f the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“De
19	2SC3326	Toshiba Semiconductor	Silicon NPN Transistor ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vo
20	2SC3327	Toshiba Semiconductor	NPN TRANSISTOR