2SC3302 |
Part Number | 2SC3302 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | : SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. FEATURES . NF=1.5dB, 1 S21el 2=16.5dB (f=500MHz) . NF=1.7dB, IS 2 lel 2 =HdB (f=1000MHz) 2SC3302 Unit in mm MAXIMUM... |
Features |
. NF=1.5dB, 1 S21el 2=16.5dB (f=500MHz)
. NF=1.7dB, IS 2 lel 2 =HdB (f=1000MHz)
2SC3302
Unit in mm
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
VCBO
17
Collector-Emitter Voltage
VCEO
12
4.2 MAX.
Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation Junction Temperature
VEBO IB IC PC
30
mA
1. BASE 2. EMITTER
70
mA
3. COLLECTOR 4. EMITTER
200
mW JEDEC
125
Storage Temperature Range
L stg
-55-125
MICROWAVE CHARACTERISTICS (Ta=25°C)
Marking : ME Weight : 0.08g
CHARACTERISTIC Transition Frequency Insertion G... |
Document |
2SC3302 Data Sheet
PDF 117.66KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC3300 |
INCHANGE |
NPN Transistor | |
2 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC3301 |
Toshiba |
Silicon NPN Transistor | |
4 | 2SC3303 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor | |
5 | 2SC3303 |
Toshiba Semiconductor |
SILICON NPN TRANSISTOR | |
6 | 2SC3303 |
GME |
Silicon NPN Transistor |