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Toshiba Semiconductor |
TRANSISTOR design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). |
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Toshiba Semiconductor |
2SC3112 design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). |
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Toshiba Semiconductor |
2SC3123 oshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics |
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Toshiba Semiconductor |
Silicon NPN Transistor B = 0 VCE = 3 V, IC = 8 mA VCE = 10 V, IC = 8 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 8 mA, f = 30 MHz Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 15 ¾ ¾ V 60 150 320 1100 1500 ¾ MHz ¾ 0.9 1.3 pF ¾ 7 12 ps Marking 1 2003-03-19 2SC31 |
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Toshiba Semiconductor |
Silicon NPN Transistor ) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliabi |
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Toshiba Semiconductor |
2SC3113 |
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Toshiba Semiconductor |
2SC3120 .6 2400 17 8 Max 0.1 1.0 ¾ 200 0.9 ¾ ¾ ¾ pF MHz dB dB Unit mA mA V VCC = 10 V, IC = 2 mA, f = 800 MHz, fL = 830 MHz (0dBm) (Figure 1) 1 2003-03-19 2SC3120 L1~L4: f0.8 mm silver plated copper wire L5: Air coil SCN-5948 (1)-(3) TOKO or equivalent |
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Toshiba Semiconductor |
2SC3148 |
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Toshiba Semiconductor |
Silicon NPN Transistor , IB = 10 mA fT VCE = 10 V, IC = 10 mA Cob NF (1) NF (2) VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 100 Hz, RG = 10 kW VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kW Note: hFE classification A: 600~1800, B: 1200~3600 Min Typ. Max U |
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Toshiba Semiconductor |
Silicon NPN Transistor .6 2400 17 8 Max 0.1 1.0 ¾ 200 0.9 ¾ ¾ ¾ pF MHz dB dB Unit mA mA V VCC = 10 V, IC = 2 mA, f = 800 MHz, fL = 830 MHz (0dBm) (Figure 1) 1 2003-03-19 2SC3120 L1~L4: f0.8 mm silver plated copper wire L5: Air coil SCN-5948 (1)-(3) TOKO or equivalent |
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Toshiba Semiconductor |
Silicon NPN Transistor , IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA VCE = 12 V, VAGC = 1.4 V, f = 200 MHz VCC = 12 V, GR = 30dB, f = 200 MHz (Note) ¾ ¾ 30 60 ¾ 400 20 ¾ 3.6 ¾ 100 nA ¾ 100 nA ¾¾ V 150 300 0.3 0. |
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Toshiba Semiconductor |
NPN Transistor oshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics |
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Toshiba Semiconductor |
Silicon NPN Transistor .1 mA ¾ ¾ 1.0 mA 15 ¾ ¾ V 40 100 200 650 1100 ¾ MHz ¾ 0.9 1.3 pF ¾ 7 12 ps Marking 1 2003-03-19 2SC3124 2 2003-03-19 2SC3124 3 2003-03-19 2SC3124 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the qua |
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Toshiba Semiconductor |
Silicon NPN Transistor mA, IB = 1.5 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 1 mA, f = 30 MHz VCE = 10 V, IC = 10 mA Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 25 ¾ ¾ V 20 70 200 ¾ ¾ 0.2 V ¾ ¾ 1.5 ¾ 1.1 1.6 pF ¾ ¾ 25 ps 250 600 ¾ MHz Marking 1 2003-03-19 |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
NPN Transistor |
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Toshiba Semiconductor |
16cm COLOUR TFT-LCD MODULE 6.3 TYPE (1) (2) (3) LTM06C310 (p-Si TFT) A high-resolution of 202 pixels per inch - equivalent to printed materials. XGA resolution – expanding applications in such areas as electronic books and personal digital-picture viewers. 6.3-inch display – simillar |
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Toshiba Semiconductor |
Silicon NPN triple diffusion Transistor |
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Desde 2024. D4U Semiconductor.
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