Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC3125 |
| Part Number | 2SC3125 |
| Manufacturer | Kexin |
| Title | Silicon NPN epitaxial planar type Transistor |
| Description | SMD Type Silicon NPN Epitaxial Planar Type 2SC3125 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Features Good Lineality of fT +0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratin. |
| Features | Good Lineality of fT +0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 25 4 50 25 150 125 -55 to +. |
2SC3125 |
| Part Number | 2SC3125 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN RF Transistor |
| Description | ·Good Linearity of fT APPLICATIONS ·Designed for TV Final Picture IF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous. |
| Features |
ter Cutoff Current
VEB= 3V; IC= 0
0.1
μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
20
200
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 15mA ; IB= 1.5mA
0.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 15mA ; IB= 1.5mA
1.5
V
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
1.1
1.6
pF
rbb’ • CC Base Time Constant IC= 1mA ; VCB= 10V; f= 30MHz 25 ps fT Current-Gai. |
2SC3125 |
| Part Number | 2SC3125 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon NPN Transistor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3125 2SC3125 TV Final Picture IF Amplifier Applications Unit: mm · Good linearity of fT Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Colle. |
| Features |
mA, IB = 1.5 mA
VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 1 mA, f = 30 MHz VCE = 10 V, IC = 10 mA
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
25 ¾ ¾
V
20 70 200
¾ ¾ 0.2 V
¾ ¾ 1.5
¾ 1.1 1.6 pF
¾ ¾ 25 ps
250 600 ¾ MHz
Marking
1 2003-03-19
2SC3125
2 2003-03-19
2SC3125
3 2003-03-19
2SC3125
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3120 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3120 |
Kexin |
Silicon NPN Transistor |
|
| 3 | 2SC3121 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3121 |
Kexin |
Silicon NPN Transistor |
|
| 5 | 2SC3121 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 6 | 2SC3122 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC3122 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 8 | 2SC3122 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 9 | 2SC3123 |
Toshiba Semiconductor |
NPN Transistor |
|
| 10 | 2SC3123 |
Kexin |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|