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2SC3125 |
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| Part Number | 2SC3125 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Good Linearity of fT APPLICATIONS ·Designed for TV Final Picture IF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO ... |
| Features |
ter Cutoff Current
VEB= 3V; IC= 0
0.1
μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
20
200
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 15mA ; IB= 1.5mA
0.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 15mA ; IB= 1.5mA
1.5
V
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
1.1
1.6
pF
rbb’ • CC Base Time Constant IC= 1mA ; VCB= 10V; f= 30MHz 25 ps fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 250 600 MHz isc Website：www.iscsemi.cn 2 Free Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc RF Product Specification isc Silicon NP... |
| Document |
 2SC3125 Data Sheet
PDF 206.25KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3120 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3120 |
Kexin |
Silicon NPN Transistor |
|
| 3 | 2SC3121 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3121 |
Kexin |
Silicon NPN Transistor |
|
| 5 | 2SC3121 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 6 | 2SC3122 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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