| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
2SK4107 ng continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op |
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Toshiba Semiconductor |
2SK4108 ng continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op |
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Toshiba Semiconductor |
1.9GHz band-up converter z Double balance circuit Pin Assignment (top view) Marking TA4101F 1. IF OUT 2. VCC 3. OSC IN 4. Base 5. Base 6. Base 7. GND 8. Collector Weight: 0.02 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Supply vo |
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Toshiba Semiconductor |
N-Channel Power MOSFET |
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Toshiba Semiconductor |
(TA8410xx) DUAL POWER OPERATIONAL AMPLIFIER l Built−in over current protector l Few external parts required l Output current up to 600 mA (AVE) l Package TA8410P : DIP16 TA8410K / AK : HSIP 10 BLOCK DIAGRAM Weight DIP16−P−300−2.54A : 1.0 g (Typ.) HSIP10−P−2.54 : 3.0 g (Typ.) 1 2001 |
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Toshiba Semiconductor |
(TA8410xx) DUAL POWER OPERATIONAL AMPLIFIER l Built−in over current protector l Few external parts required l Output current up to 600 mA (AVE) l Package TA8410P : DIP16 TA8410K / AK : HSIP 10 BLOCK DIAGRAM Weight DIP16−P−300−2.54A : 1.0 g (Typ.) HSIP10−P−2.54 : 3.0 g (Typ.) 1 2001 |
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Toshiba Semiconductor |
Silicon PNP Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide |
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Toshiba Semiconductor |
DC Brushless Motor-Driver • • • • • • • • Bootstrap circuit gives simple high side power supply. Bootstrap diodes are built in. A dead time can be set as a minimum of 1.4 µs, and it is the best for a Sine-wave from drive. 3-phase bridge output using IGBTs. FRDs are built in. |
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Toshiba Semiconductor |
N-Channel MOSFET ng continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op |
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Toshiba Semiconductor |
TA4100F |
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Toshiba Semiconductor |
High Power Switching Applications Hammer Drive / Pulse Motor Drive Inductive Load Switching .1 g (typ.) PT Tj Tstg 4.0 150 −55 to 150 W °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reli |
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Toshiba Semiconductor |
2SD1410A |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET /voltage, etc.) are within the absolute Weight: 7.0mg (typ.) maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and indi |
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Toshiba Semiconductor |
Silicon NPN Transistor ngs. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure |
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Toshiba Semiconductor |
1.9GHz BAND UP CONVERTER APPLICATION l Built in Lo and IF buffer amplifiers. l Double balanced MIX circuit l High conversion gain: GC = 3dB (typ.) l Recommended operating voltage: VCC = 2.7~3.3 V Pin Assignment (top view) Marking TA4103F Weight: 0.02 g (typ.) Maximum Ratings (Ta = 25 |
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Toshiba Semiconductor |
(TA8410xx) DUAL POWER OPERATIONAL AMPLIFIER l Built−in over current protector l Few external parts required l Output current up to 600 mA (AVE) l Package TA8410P : DIP16 TA8410K / AK : HSIP 10 BLOCK DIAGRAM Weight DIP16−P−300−2.54A : 1.0 g (Typ.) HSIP10−P−2.54 : 3.0 g (Typ.) 1 2001 |
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Toshiba Semiconductor |
DC Brushless Motor-Driver · · · · · · · · Bootstrap circuit gives simple high side supply Bootstrap diode is built in PWM and 3-phase decoder circuit are built in Outputs Rotation pulse signals 3-phase bridge output using IGBTs FRDs are built in Incorporating over current and |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET ng continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op |
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Toshiba Semiconductor |
DC Brushless Motor-Driver • • • • • • • • Bootstrap circuits give simple high-side supply. Bootstrap diodes are built in. A dead time can be set as a minimum of 1.4 μs and it is the best for a Sine-wave from drive. 3-phase bridge output using IGBTs. FRDs are built in. Include |
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Toshiba Semiconductor |
Octal Bus Buffer • Outputs have 47-Ω (typ.) resistors connected in series. • High speed: tpd = 4.5 ns (typ.) at VCC = 5 V • TTL-level inputs: VIL = 0.8 V (max) VIH = 2.0 V (max) • Power-down protection is provided on all inputs. • Low noise: VOLP = 0.35 V (typ) Star |
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Desde 2024. D4U Semiconductor.
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