Toshiba Semiconductor 1SV Hoja de datos

No.	parte #	Fabricante	Descripción
1	1SV123	Toshiba Semiconductor	Variable Capacitance Diode
2	1SV100	Toshiba Semiconductor	Silicon Diode
3	1SV101	Toshiba Semiconductor	Variable Capacitance Diode
4	1SV312	Toshiba Semiconductor	Diode mprove the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when
5	1SV149	Toshiba Semiconductor	BARIABLE CAPACITANCE DIODE
6	1SV230	Toshiba Semiconductor	Variable Capacitance Diode C (25) (25) ´ 100 (%) 2 2003-04-02 1SV230 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail d
7	1SV237	Toshiba Semiconductor	Diode ty to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOS
8	1SV242	Toshiba Semiconductor	Variable Capacitance Diode 1: Characteristic between anode 1 and anode 2 Note 2: Units are compounded in one package and are matched to 2.5% C (max) - C (min) C (min) =< 0.025 (VR = 1~28 V) Marking 1 2003-04-02 1SV242 (Note 3) Note 3: dC = C (Ta) - C C (25) (25)
9	1SV279	Toshiba Semiconductor	Variable Capacitance Diode ilure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C2V C10V C2V / C10V rs IR = 1 μA VR = 15 V VR = 2 V
10	1SV306	Toshiba Semiconductor	VARIABLE CPACITANCE DIODE
11	1SV102	Toshiba Semiconductor	Variable Capacitance Diode
12	1SV103	Toshiba Semiconductor	Variable Capacitance Diode
13	1SV153	Toshiba Semiconductor	Variable Capacitance Diode
14	1SV160	Toshiba Semiconductor	Variable Capacitance Diode e to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoi
15	1SV216	Toshiba Semiconductor	Variable Capacitance Diode uality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TO
16	1SV217	Toshiba Semiconductor	Variable Capacitance Diode ¾ 1.0 V nA pF pF ¾ W 1 2003-04-02 1SV217 CAPACITANCE CHANGE RATIO @C (%) (Note 2) Note 2: dC = C (Ta) - C C (25) (25) ´ 100 (%) 2 2003-04-02 1SV217 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve th
17	1SV322	Toshiba Semiconductor	Silicon Diode JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C1V C4V C1V / C4V
18	1SV128	Toshiba Semiconductor	Diode
19	1SV147	Toshiba Semiconductor	BARIABLE CAPACITANCE DIODE
20	1SV172	Toshiba Semiconductor	Diode d failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Forward voltage Total capacitance Series resistance VR IR = 10 μA IR VR = 50 V VF IF = 50 mA (Note) CT VR = 50 V,