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1SV322 |
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| Part Number | 1SV322 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 1SV322 TCXO/VCO • High capacitance ratio: C1V / C4V = 4.3 (typ.) • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolu... |
| Features |
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance
VR IR C1V C4V C1V / C4V rs
IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz
⎯ VR = 4 V, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
Min Typ. Max Unit
10
⎯
⎯
V
⎯
⎯
3
nA
26.5 ⎯ 29.5 pF
6.0
⎯
7.1
pF
4.0 4.3
⎯
⎯
⎯
0.4 0.8
Ω
Start of commercial production
1999-03
1
2014-03-01
1SV322
2
2014-03-01
... |
| Document |
 1SV322 Data Sheet
PDF 137.81KB |
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