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Toshiba |
CMOS 4-BIT SINGLE CHIP MICROCOMPUTER 4-bit single chip microcomputer with built-in ROM, RAM, input/output port, divider, timer/counter, and serial port. Instruction execution time: 4~s (at 4 MHz clock) Effective instruction set 90 instructions, software compatible in the series Subr |
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Toshiba |
CMOS 4-Bit Microcontroller |
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Toshiba |
single chip microcomputer 0 TMP4310AP 1024 x 8 ROM 48 x 4 RAM 22 I/O Lines 0 TMP4315BP 1536 x 8 ROM 64 x 8 RAM 35 I/O Lines 0 TMP4320AP 2048 x 8 ROM 128 x 4 RAM 35 I/O Lines 0 THP4300C Evaluator Chip for TLCS-43 Tr~P431 OAP Ti>1P4320AP TI~P4315BP Tr~p4300C o 35 Basic instr |
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Toshiba |
Power Transistor W °C °C Array Configuration R1 R2 1 10 2 4 6 8 3 5 7 9 R1 ≈ 5 kΩ, R2 ≈ 120 Ω 1 2004-07-01 MP4009 Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation, Ta = 25°C) Maximum lead temperature |
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Toshiba Semiconductor |
N-Channel Power MOSFET mJ EART Tch Tstg 0.44 150 −55 to 150 °C °C Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-32C1D Weight: 3.9 g (typ.) W PDT EAS IAR W mJ A Single Pulse avalanche energy (Note 1) Avalanche current Repetitive avalanche energy (Note 2) 4-device operation |
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Toshiba Semiconductor |
(TMP47C101 / TMP47C201) CMOS 4-bit Microcontroller • 4-bit single chip microcomputer • Instruction execution time: 1.3µs (at 6MHz) • Low voltage operation: 2.2V (at 2MHz RC) • 89 basic instructions - Instruction set is the same as TLCS-47 series • ROM table look-up instructions • Subroutine nesting: |
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Toshiba Semiconductor |
N-Channel Power MOSFET |
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Toshiba Semiconductor |
Power Transistor Tj Tstg 4.0 150 −55 to 150 W °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signific |
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Toshiba Semiconductor |
N-Channel Power MOSFET |
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Toshiba |
Power Transistor 5 2 4 R1 R2 1 R1 ≈ 4 kΩ R2 ≈ 800 Ω 1 2002-11-20 MP4006 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 |
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Toshiba Semiconductor |
Power Transistor |
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Toshiba Semiconductor |
Power Transistor A ― ― 2-32B1B Weight: 6.0 g (typ.) Array Configuration R1 R2 3 6 7 10 1 5 8 12 2 4 9 11 R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω 1 2002-11-20 MP4504 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (4 devices operation, |
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Toshiba Semiconductor |
TMP47C1637 |
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Toshiba Semiconductor |
Silicon NPN Power Transistor 0 −55 to 150 W °C °C Array Configuration 2 3 4 9 10 11 1 6 5 w w w .D a S a t h t e e 4U . 8 m o c 12 7 1 2002-11-20 www.DataSheet4U.com MP4304 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (4 |
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Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
Power Transistor JEDEC JEITA TOSHIBA ― ― 2-32B1B Weight: 6.0 g (typ.) Array Configuration 2 5 4 8 9 12 11 1 R1 R2 3 6 R2 ≈ 200 Ω 7 10 R1 ≈ 5 kΩ 1 2004-07-01 MP4506 Marking MP4506 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb |
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Toshiba Semiconductor |
N-Channel Power MOSFET |
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Toshiba Semiconductor |
N-Channel Power MOSFET 2 2.2 4.4 28 140 3 0.22 mJ EART Tch Tstg 0.44 150 −55 to 150 °C °C Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-32C1D Weight: 3.9 g (typ.) W PDT EAS IAR EAR W mJ A Single pulse avalanche energy (Note 1) Avalanche current 1 device operation Repetitiv |
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Toshiba Semiconductor |
TMP47C422F 4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datashe |
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Toshiba Semiconductor |
NMOS 4-BIT MICROCONTROLLER |
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Desde 2024. D4U Semiconductor.
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