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MP4411 |
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| Part Number | MP4411 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | www.DataSheet4U.com MP4411 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One) MP4411 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse... |
| Features |
2 2.2 4.4 28 140 3 0.22 mJ EART Tch Tstg 0.44 150 −55 to 150 °C °C Unit V V V A
JEDEC JEITA TOSHIBA
― ― 2-32C1D
Weight: 3.9 g (typ.)
W
PDT EAS IAR EAR
W mJ A
Single pulse avalanche energy (Note 1) Avalanche current 1 device operation Repetitive avalanche energy (Note 2) 4 devices operation Channel temperature Storage temperature range
Note 1: Condition for avalanche energy (single pulse) measurement VDD = 50 V, starting Tch = 25°C, L = 20 mH, RG = 25 Ω, IAR = 3 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive ... |
| Document |
 MP4411 Data Sheet
PDF 229.75KB |
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