Toshiba K8A Hoja de datos

No.	parte #	Fabricante	Descripción
1	K8A60DA	Toshiba Semiconductor	Silicon N-Channel MOSFET significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design th
2	K8A50D	Toshiba	Silicon N-Channel MOSFET f high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
3	K8A65D	Toshiba Semiconductor	TK8A65D icant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appr
4	TK8A25DA	Toshiba	Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK8A25DA 1: Gate (G) 2: Drain (
5	TK8A60DA	Toshiba Semiconductor	Transistor significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design th
6	TK8A65D	Toshiba Semiconductor	Silicon N-Channel MOSFET rature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute ma
7	TK8A45D	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.73 Ω (typ.) (2) High forward transfer admittance: \|Yfs\| = 3.8 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packa
8	TK8A50D	Toshiba	N-Channel MOSFET f high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
9	K8A55DA	Toshiba	TK8A55DA TOSHIBA ⎯ SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliabili
10	TK8A10K3	Toshiba Semiconductor	Field Effect Transistor eliability significantly even if the operating conditions (i.e. Weight: 1.7 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconduc
11	TK8A55DA	Toshiba	Silicon N-Channel MOSFET TOSHIBA ⎯ SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliabili
12	TK8A50DA	Toshiba Semiconductor	N-Channel MOSFET TOSHIBA ⎯ SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliabili
13	TK8A60W	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK8A60W
14	TK8A60W5	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) (2) (3) (4) Fast reverse recovery time: trr = 80 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.44 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.4
15	TK8A65W	Toshiba	N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.53 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK8A65W 1: