| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Toshiba |
TK80E07NE |
|
|
|
|
Toshiba |
Silicon N Channel MOS Type Field Effect Transistor |
|
|
|
|
Toshiba |
N-Channel MOSFET .) 2 change in Note : Using continuously under heavy loads (e.g. the application of high temperat ure/current/voltage and the signif icant temperature, etc.) may cause this product to decrease in the relia bility significantly even if the operating |
|
|
|
|
Toshiba |
TK80E08K3 change in Note :Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions |
|
|
|
|
Toshiba |
Silicon N-channel MOS (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (H |
|
|
|
|
Toshiba Semiconductor |
Field Effect Transistor |
|
|
|
|
Toshiba Semiconductor |
Switching Regulator Applications 1: Gate 2: Drain (Heat Sink) 3: Source 4.5±0.2 2.54 2.54 2.53±0.2 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant |
|
|
|
|
Toshiba |
Silicon N-channel MOS (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: S |
|
|
|
|
Toshiba |
Silicon N-channel MOS (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (H |
|
|
|
|
Toshiba |
Silicon N-Channel MOSFET (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circui |
|
|
|
|
Toshiba |
Silicon N-Channel MOSFET (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circui |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circui |
|
|
|
|
Toshiba Semiconductor |
MOSFETs (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET 3) Channel temperature Storage temperature range (Note 4) (Note 4) JEDEC JEITA TOSHIBA SC-97 2-9F1C Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.2 Unit 1 °C/W 0.4 ± 0.1 |
|
|
|
|
Toshiba |
Silicon N-Channel MOSFET (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 � MOSFET (3) 4.0-V drive (4) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 43 mΩ (typ.) (@VGS = 4 V) 3. |
|
|
|
|
Toshiba |
Silicon N-Channel MOSFET (1) AEC-Q101 qualified (Note 1) (2) 175 � MOSFET (3) 4.5-V drive (4) Low drain-source on-resistance : RDS(ON) = 12 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 9 mΩ (typ.) (@VGS = 10 V) Note 1: For detail information, please contact our sales. 3. Packaging and |
|
Desde 2024. D4U Semiconductor.
|