K80E07NE |
Part Number | K80E07NE |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market. z Low drain−source on-resistance : RDS(ON) = 6.9 mΩ (typ.) z Low leakage current : IDSS = 10 µA (max) (VDS = 70 V) z Enhancement mode : Vth = 2.0. |
Features | . |
Datasheet |
K80E07NE Data Sheet
PDF 288.28KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K80E08K3 |
Toshiba |
TK80E08K3 | |
2 | K8006 |
ETC |
BASE UNIT | |
3 | K810 |
NEC |
N-Channel Silicon Power MOS FET | |
4 | K810A |
Sony |
Sony Ericsson | |
5 | K810I |
Sony |
Sony Ericsson | |
6 | K811 |
NEC |
2SK811 | |
7 | K814P |
Vishay |
Optocoupler | |
8 | K815P |
Vishay |
Optocoupler | |
9 | K817 |
NEC |
2SK817 | |
10 | K817P |
Vishay Telefunken |
Optocoupler |