| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba |
FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier) = −30 V, VDS = 0 V (BR) GDS VDS = 0, IG = −100 µA IDSS (Note) VDS = 10 V, VGS = 0 VGS (OFF) Yfs Ciss Crss NF (1) VDS = 10 V, ID = 0.1 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, I |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET = −30 V, VDS = 0 V (BR) GDS VDS = 0, IG = −100 µA IDSS (Note) VDS = 10 V, VGS = 0 VGS (OFF) Yfs Ciss Crss NF (1) VDS = 10 V, ID = 0.1 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, I |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
N-Channel MOSFET liability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-3J1D Weight: 0.013 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source voltage Drain curre |
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Toshiba |
2SK1771 liability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-3J1D Weight: 0.013 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source voltage Drain curre |
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Toshiba |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.85mA) 3. Packaging and Internal Circuit TK17A80W 1 |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET the appropriate reliability upon reviewing the Weight: 6 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated fail |
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Toshiba |
Field Effect Transistor |
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Toshiba |
2SK1767 |
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Toshiba Semiconductor |
MOSFETs (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.20 Ω (typ.) High forward transfer admittance: |Yfs| = 12.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Pa |
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Toshiba Semiconductor |
MOSFETs (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.20 Ω (typ.) High forward transfer admittance: |Yfs| = 12.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Pa |
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Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor |
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Toshiba |
Field Effect Transistor |
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Toshiba |
Field Effect Transistor |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit 1: Gate |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK17A25D 1: Gate (G) 2: Drain ( |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK17A65W |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0. |
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Toshiba Semiconductor |
MOSFETs (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit 1: Gate |
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Desde 2024. D4U Semiconductor.
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