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| Part Number | TK17J65U |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | TK17J65U |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) = 0.26Ω(MAX) ·Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re. |
| Features |
·Low drain-source on-resistance: RDS(on) = 0.26Ω(MAX) ·Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So. |
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Desde 2024. D4U Semiconductor.
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