Toshiba D23 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BD237	Toshiba	Silicon NPN Transistor . Designed for Complementary Use with BD234, BD236 and BD238 BD233 BD235 IBD237 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage BD233 BD235 BD237 Collector-Emitter Voltage BD233 BD235 BD237 Emitter-Base V
2	BD238	Toshiba	Silicon PNP Transistor . Designed for Complementary Use with BD233, BD235 and BD237 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD234 BD236 BD238 Collector-Emitter Voltage BD234 BD236 BD238 Emitter-Base Voltage Collector Current DC
3	3000YKD23	Toshiba Semiconductor	Thyristor
4	BD236	Toshiba	Silicon PNP Transistor . Designed for Complementary Use with BD233, BD235 and BD237 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD234 BD236 BD238 Collector-Emitter Voltage BD234 BD236 BD238 Emitter-Base Voltage Collector Current DC
5	2SD2352	Toshiba Semiconductor	Silicon NPN Transistor um ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated f
6	2SD2353	Toshiba Semiconductor	Silicon NPN Transistor um ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated f
7	2SD2385	Toshiba Semiconductor	NPN Transistor 140 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 7 A hFE (2) VCE (sat) VBE fT Cob VCE = 5 V, IC = 12 A IC = 7 A, IB = 7 mA VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
8	TCD2301C	Toshiba	CCD LINEAR IMAGE SENSOR
9	D2353	Toshiba Semiconductor	2SD2353 gs. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate
10	TMP92CD23DFG	TOSHIBA	32-bit microcontroller : 1 license SW96RN2-ZCC: Object code can be freely copied SW96MN3-ZCC: 10 licenses SW96RNC-ZCC: Object code can be freely copied. With source code. :Under development Test tool Controller Emulation pod BM92FD23AF0A-M15 BM1040R0A/BM1055R0C BM92CY2
11	TLGD231	Toshiba	LED Lamp
12	TLGD233P	Toshiba	LED Lamp
13	TMP92FD23AFG	Toshiba	CMOS 32-Bit Microcontroller
14	TMP92CD23AFG	Toshiba	CMOS 32-Bit Microcontroller
15	D2385	Toshiba	2SD2385
16	BD235	Toshiba	Silicon NPN Transistor . Designed for Complementary Use with BD234, BD236 and BD238 BD233 BD235 IBD237 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage BD233 BD235 BD237 Collector-Emitter Voltage BD233 BD235 BD237 Emitter-Base V
17	BD233	Toshiba	Silicon NPN Transistor . Designed for Complementary Use with BD234, BD236 and BD238 BD233 BD235 IBD237 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage BD233 BD235 BD237 Collector-Emitter Voltage BD233 BD235 BD237 Emitter-Base V
18	BD234	Toshiba	Silicon PNP Transistor . Designed for Complementary Use with BD233, BD235 and BD237 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD234 BD236 BD238 Collector-Emitter Voltage BD234 BD236 BD238 Emitter-Base Voltage Collector Current DC
19	2SD2384	Toshiba Semiconductor	NPN Transistor 140 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 6 A hFE (2) VCE (sat) VBE fT Cob VCE = 5 V, IC = 10 A IC = 6 A, IB = 6 mA VCE = 5 V, IC = 6 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
20	2SD2386	Toshiba Semiconductor	NPN Transistor 40 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 6 A hFE (2) VCE (sat) VBE fT Cob VCE = 5 V, IC = 10 A IC = 6 A, IB = 6 mA VCE = 5 V, IC = 6 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz ―