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2SD2386 |
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| Part Number | 2SD2386 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary ... |
| Features |
40 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1) (Note)
VCE = 5 V, IC = 6 A
hFE (2) VCE (sat)
VBE fT Cob
VCE = 5 V, IC = 10 A IC = 6 A, IB = 6 mA VCE = 5 V, IC = 6 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
― ― 140
5000
2000 ― ― ― ―
Note: hFE (1) classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000
Typ. Max Unit
― 5.0 µA
― 5.0 µA
――
V
― 30000
――
― 2.5
V
― 3.0
V
30 ― MHz
90 ― pF
Marking
TOSHIBA D2386
hFE classification (A/B/C)
Product No. Lot No.
Explanation of Lot No.
Month of manufacture (January to December are deno... |
| Document |
 2SD2386 Data Sheet
PDF 132.05KB |
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