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Toshiba |
NPN Transistor : . High DC Current Gain of 250 to 750 at VCE=5V, I C =0.5A . Low VcE(sat) of 1.0V (MAX.) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C Unit in mm 10.3MAX ^3.6±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT C |
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Toshiba Semiconductor |
2-IN-1 Low-Side Power Switch • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip. • Can directly drive a power load from a CMOS or TTL logic. Weight: 0.08 g (typ.) • Built-in protection circuits agai |
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Toshiba |
CCD Image Sensor |
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Toshiba Semiconductor |
Silicon Monolithic Power MOS |
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Toshiba |
NPN Transistor . High Voltage : VCEO (SUS)=450V . Triple Diffused Design. . Darlington Design. INDUSTRIAL APPLICATION Unit in mm 2-04.O±Q.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu |
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Toshiba |
Silicon NPN Transistor . High DC Current Gain : h FE=1000(Min.) (V CE =3V, I C =15A) . Low Collector Saturation Voltage • • VcE(sat)=1.5V(Max.) (Ic=15A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 3 4.3 MAX. MAXI |
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Toshiba Semiconductor |
Silicon N-Channel Transistor |
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Toshiba Semiconductor |
Silicon Monolithic Power MOS l A monolithic power IC with a new structure combining a control block and a vertical power MOSFET (π-MOS) on a single chip. Built-in Protection circuits against overvoltage, load short circuiting, and thermal shutdown. l Can directly drive a power |
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Toshiba Semiconductor |
2-IN-1 Low-Side Switch • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip. • Can directly drive a power load from a CMOS or TTL logic. Weight: 0.08 g (typ.) • Built-in protection circuits agai |
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Toshiba |
Microwave Power MMIC Amplifier High Power P1dB=33dBm(TYP.) High Power Added Efficiency ηadd=14%(TYP.) TMD1013-1-431 TMD1013-1-431 High Gain G1dB=25dB(TYP.) Operable Frequency : f=10.0-12.0GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE |
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Toshiba Semiconductor |
MICROWAVE POWER MMIC AMPLIFIER |
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Toshiba Semiconductor |
FIBER OPTIC RECEIVING MODULE |
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Toshiba Semiconductor |
Panel Circuit Indicator nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
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Toshiba Semiconductor |
Panel Circuit Indicator nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
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Toshiba Semiconductor |
LED Lamp he significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design |
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Toshiba Semiconductor |
LED Lamp he significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design |
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Toshiba Semiconductor |
MOSFET urrent Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage a |
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Toshiba Semiconductor |
Silicon Monolithic Power MOS • A monolithic power IC with a new structure combining a control block and a vertical power MOSFET (L2-π-MOSⅤ) on single chip. • Can directly drive a power load from a CMOS or TTL logic. • Built-in protection circuits against overvoltage (active clam |
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Toshiba Semiconductor |
N-Channel MOSFET 50 −55 to 50 Unit V V V A W mJ A mJ °C °C 0.62±0.15 Ф0.2 M A 2.54 2.54 0.57+-00..2105 2.53±0.2 4.5±0.2 123 1: Gate 2: Drain (Heat Sink) 3: Source JEDEC - JEITA - TOSHIBA 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heav |
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Toshiba |
Silicon Monolithic Power MOS • A monolithic power IC with a structure combining a control block (Bi-CMOS) and a vertical power MOSFET on a single chip. SOP8-P-1.27A Weight: 0.08 g (Typ.) • One side of load can be grounded to a high-side switch. • Can directly drive a power l |
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Desde 2024. D4U Semiconductor.
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