2SD1052 |
Part Number | 2SD1052 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | 2SD1052 SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . FEATURES : . High DC Current Gain of 250 to 750 at VCE=5V, I C =0.5A . Low VcE(sat) of 1.0V (MAX... |
Features |
: . High DC Current Gain of 250 to 750 at VCE=5V, I C =0.5A . Low VcE(sat) of 1.0V (MAX.) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C
Unit in mm 10.3MAX ^3.6±Q2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
VCBO VCEO vEB0
50 V
50
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
IB
T-i
Tstg
0.5
1. BASE 1.5 2. collector Cheat sink)
3. EMITTER 30
JEDEC 150 °C EIAJ
TO— 220AB SC—46
-55-150 °C TOSHIBA
2... |
Document |
2SD1052 Data Sheet
PDF 111.67KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD1051 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor | |
2 | 2SD1052A |
Toshiba |
Silicon NPN Transistor | |
3 | 2SD1055 |
Rohm |
Medium Power Transistor | |
4 | 2SD1056 |
Fuji Electric |
NPN Transistor | |
5 | 2SD1000 |
NEC |
NPN TRANSISTOR | |
6 | 2SD1000 |
Kexin |
NPN Silicon Epitaxial Transistor |