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Toshiba |
32 GBIT (4G X 8 BIT) CMOS NAND E2PROM Organization Device capacity Register Page size Block size TC58NVG5T2HTA00 9216 516 1064 8 bits 9216 8 9216 bytes (4128K 516K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Page Program, Multi Page Re |
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Toshiba |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM • Organization Device capacity Register Page size Block size • TC58NVG6DDJTA00 17664 × 256 × 2130 × 8 bits 17664 × 8 bits 17664 bytes (4M + 320 K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Progr |
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Toshiba Semiconductor |
2SC5859 tching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 18 A IC = 18 A, IB = |
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Toshiba |
1 GBIT (128M x 8 BIT) CMOS NAND E2PROM • Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read • Mode control Serial i |
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Toshiba Semiconductor |
2SC5886 conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept a |
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Toshiba |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM Organization Memory cell array Register Page size Block size TC58NVG6D2G 8832 512K 8 8832 8 8832 bytes (2M 160 K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase |
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Toshiba |
32 GBIT (4G X 8 BIT) CMOS NAND E2PROM • Organization Memory cell array Register Page size Block size • TC58NVG5D2F 8640 × 512K × 8 8640 × 8 8640 bytes (1M + 56 K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, |
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Toshiba |
512M-BIT (64M x 8 BITS) CMOS NAND E2PROM • Organization Memory cell allay 528 × 128K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read • Mode control Serial input/output Command control • Po |
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Toshiba |
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
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Toshiba |
16 GBIT (2G X 8 BIT) CMOS NAND E2PROM • Organization Memory cell array Register Page size Block size • TC58NVG4D2E 8568 × 260.5K × 8 8568 × 8 8568 bytes (1M + 47 K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Eras |
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Toshiba |
4G-BIT (512M x 8 BIT) CMOS NAND E2PROM • Organization x8 Memory cell array 4352 × 128K × 8 Register 4352 × 8 Page size 4352 bytes Block size (256K + 16K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase |
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Toshiba Semiconductor |
64M-Bit CMOS NAND EPROM |
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Toshiba |
NAND memory Toggle DDR1.0 ........................................................................................................................................................ 9 1.4. Diagram Legend............................................................................ |
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Toshiba Semiconductor |
2SC5855 oltage Transition Frequency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE |
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Toshiba Semiconductor |
2SC5856 perating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and ind |
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Toshiba |
1 GBIT (128M x 8-BIT) CMOS NAND E2PROM • Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read • Mode control Serial i |
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Toshiba |
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
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Toshiba |
Silicon NPN Transistor uency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = |
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Toshiba |
64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT641/B641 also features a |
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Toshiba |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM • Organization Memory cell array Register Page size Block size • x8 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Pa |
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Desde 2024. D4U Semiconductor.
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