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TC58NVG1S3ETA00 |
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| Part Number | TC58NVG1S3ETA00 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The devi... |
| Features |
• Organization Memory cell array Register Page size Block size • x8 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 2008 blocks Max 2048 blocks Power supply VCC = 2.7V to 3.6V Access time Cell array to register Serial Read Cycle Program/Erase time Auto Page Program Auto Block Erase Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 25 μs max... |
| Document |
 TC58NVG1S3ETA00 Data Sheet
PDF 550.27KB |
Similar Datasheet
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| 1 | TC58NVG1S3ETAI0 |
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| 5 | TC58NVG1S3HBAI6 |
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| 6 | TC58NVG1S3HTA00 |
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Desde 2024. D4U Semiconductor.
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