Toshiba C56 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SC5612	Toshiba Semiconductor	NPN TRANSISTOR (sat) fT Cob tstg tf VCB = 2000 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 9 A VCE = 5 V, IC = 17 A IC = 17 A, IB = 4.25 A IC = 17 A, IB = 4.25 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 8 A
2	C5612	Toshiba Semiconductor	2SC5612 (sat) fT Cob tstg tf VCB = 2000 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 9 A VCE = 5 V, IC = 17 A IC = 17 A, IB = 4.25 A IC = 17 A, IB = 4.25 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 8 A
3	C5695	Toshiba Semiconductor	2SC5695
4	1ZC56A	Toshiba	ZENER DIODE
5	C5684	Toshiba	2SC5684 t Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 720 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.08 A IC = 0.3 A, IB = 0.06 A IC = 0.3 A, IB = 0.06 A
6	2SC5684	Toshiba Semiconductor	Silicon NPN Transistor
7	HN3C56FU	Toshiba	Silicon NPN Epitaxial Type Transistor o decrease in the JEDEC ― JEITA ― TOSHIBA 2-2J1A Weight: 6.8mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the a
8	TBC560	Toshiba	Silicon PNP Transistor . High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O.E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.27 \ X 23J MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL
9	2SC5692	Toshiba Semiconductor	NPN Transistor temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolu
10	TC74HC574AFW	Toshiba Semiconductor	(TC74HC564 / TC74HC574) OCTAL D-TYPE FLIP-FLOP • High speed: fmax = 62 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 µA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Output drive capability: 15 LSTTL loads • Symmetrical output impedance: \|IOH\| = IOL = 6 mA (mi
11	TC74HC564AF	Toshiba Semiconductor	Octal D-Type Filp-Flop • High speed: fmax = 62 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Output drive capability: 15 LSTTL loads • Symmetrical output impedance: \|IOH\| = IOL = 6 mA (mi
12	TC74HC564AP	Toshiba Semiconductor	Octal D-Type Filp-Flop • High speed: fmax = 62 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Output drive capability: 15 LSTTL loads • Symmetrical output impedance: \|IOH\| = IOL = 6 mA (mi
13	2SC5695	Toshiba Semiconductor	Silicon NPN Transistor Switching time Fall time Storage time Fall time VCE (sat) VBE (sat) fT Cob tstg (1) tf (1) tstg (2) tf (2) Test Condition VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 10 A VCE = 5 V, IC = 17 A IC = 17