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TBC560 |
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| Part Number | TBC560 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC559 TBC560 PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. THE TBC559 AND TBC560 IS LOW NOISE TYPE FOR INPUT STAGE OF AUDIO AMPLIFIERS. FE... |
| Features |
. High V CE0 : -45V (TBC560)
-25V (TBC559)
. High hFE = 125-475
Unit in mm
5. 1 MAX. , 1 :
< S
t-
0.45
I']
O.E35 MAX.
1
r
J
C.45
1!
m r
s CO 00
A c!
r-
r-t
1.27
m
/
1.27
X
23J
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
TBC559 v (BR)CBO
TBC560
Collector-Emitter Breakdown Voltage
TBC559 v (BR) CEO
TBC560
Emitter-Base Breakdown Voltage
v (BR)EBO
RATING -30 -50 -25 -45
-5
Collector Current
DC Peak
Base Current (Peak)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
ic lCP IBP PC T
J
T stg
-100 -2... |
| Document |
 TBC560 Data Sheet
PDF 53.07KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | TBC50C04 |
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| 2 | TBC50DS |
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|
| 3 | TBC546 |
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|
| 4 | TBC547 |
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| 5 | TBC548 |
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| 6 | TBC549 |
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Desde 2024. D4U Semiconductor.
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