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Toshiba |
Silicon NPN Transistor ng conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept |
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Toshiba |
NPN TRANSISTOR ter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE |
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Toshiba Semiconductor |
2SC5387 conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept a |
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Toshiba Semiconductor |
2SC5352 voltage, etc.) are within the absolute maximum www.DataSheet4U.com ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual r |
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Toshiba |
2SC5359 te maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and est |
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Toshiba Semiconductor |
2SC5354 perating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating C |
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Toshiba Semiconductor |
2SC5339 |
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Toshiba |
2SC5307 Condition VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 20 mA IC = 20 mA, IB = 0.5 mA VCE = 5 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) |
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Toshiba |
2SC5313 |
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Toshiba |
2SC5319 |
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Toshiba Semiconductor |
2SC5355 age DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr Test Condition VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC |
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Toshiba |
2SC5356 operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and i |
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Toshiba |
CMOS MASK ROM |
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Toshiba |
4M BIT CMOS MASK ROM • Single 5V Power Supply • Access Time: 250ns (Max.) • Power Dissipation Operating Current: 30mA (Hax.) Standby Current 20~A (Max.) • All Inputs and Outputs: TTL Compatible • Three State Outputs • 32 pin 600 mil width Plastic DIP • Fully Static Oper |
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Toshiba |
CMOS MASK ROM • Single 5V Power Supply • Access Time: 150ns (Max.) • Power Dissipation Oper3tin? Current: 40mA (Hax.) 20~A (Max.) PIN COrmECTION A2 Al AO DO Dl D2 GND 14 :;: I'Ll H > P-t 0 E-< VDn 27 1114 26 A13 25 A8 24 A9 23 All 22 1116 21 AI0 20 C'E/CE 19 |
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Toshiba |
2SC5331 |
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Toshiba Semiconductor |
NPN TRANSISTOR urrent Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Forward Voltage (Damper Diode) Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) EBO hFE (1) hFE (2) VCE ( |
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Toshiba Semiconductor |
NPN TRANSISTOR conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept a |
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Toshiba Semiconductor |
PROGRAMMABLE INTERVAL TIMER |
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Toshiba Semiconductor |
2SC5368 g conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept |
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Desde 2024. D4U Semiconductor.
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