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C5359 |
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| Part Number | C5359 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-... |
| Features |
te maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2012-08-31
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
I CBO I EBO V (B... |
| Document |
 C5359 Data Sheet
PDF 175.69KB |
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