| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
2SC3381 |
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Toshiba Semiconductor |
2SC3327 |
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Toshiba |
SILICON NPN TRIPLE DIFFUSED TYPE TRANSISTOR . Excellent Switching Times : t r =1.0/is(Max.), tf=1.0>us(Max. ) . High Collector Breakdown Voltage : at Ic=4A VcEO=400V INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 7.0 03.2x0.2 czil / ^ |
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Toshiba Semiconductor |
2SC3306 |
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Toshiba Semiconductor |
2SC3302 |
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Toshiba |
2SC3324 the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Der |
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Toshiba |
2SC3329 Collector-emitter saturation voltage Base-emitter voltage Base spreading resistance Transition frequency Collector output capacitance Noise figure ICBO IEBO V (BR) CEO VCB = 80 V, IE = 0 VEB = 5 V, IC = 0 IC = 1 mA, IB = 0 hFE VCE = 6 V, IC = 2 m |
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Toshiba Semiconductor |
Silicon NPN Triple Diffused TRANSISTOR ithin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test |
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Toshiba |
SILICON NPN EPITAXIAL TYPE TRANSISTOR . Low Collector Saturation Voltage : vCE(sat)=0.4V(Max.) at Ic=3A . High Speed Switching Time : t s tg=l . 0/is(Typ . ) . Complementary to 2SA1308. INDUSTRIAL APPLICATIONS Unit in mm 1H3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base |
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Toshiba Semiconductor |
2SC3376 |
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Toshiba Semiconductor |
NPN Transistor |
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Toshiba |
ZENER DIODE |
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Toshiba |
2SC3333 |
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Toshiba |
2SC3303 operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derat |
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Toshiba |
2SC3326 ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vo |
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Toshiba Semiconductor |
SILICON NPN TRANSISTOR operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derat |
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Toshiba Semiconductor |
Silicon NPN Triple Diffused TRANSISTOR = 20 V, IC = 25 mA IC = 10 mA, IB = 1 mA VCE = 20 V, IC = 25 mA VCE = 10 V, IC = 10 mA VCB = 30 V, IE = 0, f = 1 MHz JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 250 ¾ ¾ V 50 ¾ ¾ |
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Toshiba |
2SC3346 |
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Toshiba |
2SC3307 ignificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handli |
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Toshiba |
2SC3325 f the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“De |
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Desde 2024. D4U Semiconductor.
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