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2SC3308 |
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| Part Number | 2SC3308 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | :A SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Voltage : vCE(sat)=0.4V(Max.) at Ic=3A . High Speed Switching Time : t s tg=l . 0/... |
| Features |
. Low Collector Saturation Voltage
: vCE(sat)=0.4V(Max.) at Ic=3A . High Speed Switching Time : t s tg=l . 0/is(Typ . ) . Complementary to 2SA1308.
INDUSTRIAL APPLICATIONS Unit in mm
1H3MAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Collector Power Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature Range
SYMBOL VcBO VCEO VEBO ic ICP
RATING 100 80
PC 30
Tstg
150
-55-150
UNIT
1. BASE 2. COLLECTOR (HEAT SINK' 3. EMITTER °C
JEDEC
ELECTRICAL CHARACTERISTICS (Ta =25°C)
CHARA... |
| Document |
 2SC3308 Data Sheet
PDF 133.81KB |
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