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Toshiba Semiconductor |
Silicon NPN Transistor |
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Toshiba |
SILICON NPN TRANSISTOR • High Breakdown Voltage : VCEO=80V Complementary to 2SA816. Unit in mm 10.3 MAX 0Z.6 ±0.2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Po |
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Toshiba |
8-Bit Shift Register (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) High speed: fMAX = 56 MHz (typ.) at VCC = 5 V (3) Low power dissipation: ICC = 4.0 µA (max) at Ta = 25 � (4) Balanced propagation delays: tPLH ≈ tPHL (5) Wide operating voltage ra |
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Toshiba |
Silicon NPN Transistor • High Voltage : VCBO=300V • Wide Safe Oprating Area. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO Collector-Emitter Voltage v CEO Emitter-Base Voltage v EBO Collector Current ic Emitter Current X |
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Toshiba Semiconductor |
TMP47C1637 |
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Toshiba |
ZENER DIODE |
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Toshiba Semiconductor |
2SC1627 A, IB = 0 VCE = 2 V, IC = 50 mA VCE = 2 V, IC = 200 mA IC = 200 mA, IB = 10 mA VCE = 2 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Weight: 0.21 g (typ.) Min ¾ ¾ 80 70 40 ¾ 0.55 ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾ ¾ 100 10 Max 0.1 0.1 ¾ 240 |
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Toshiba |
TFT LCD (1) 18.1”SXGA display size for LCD Monitor (2) LVDS interface system (3) With inverter 46cm COLOR TFT-LCD MODULE (18.1 TYPE) LTM18C161S (a-Si TFT) TENTATIVE MECHANICAL SPECIFICATIONS Item Dimensional Outline (typ.) Number of Pixels Active Area Pixe |
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Toshiba |
Silicon NPN Epitaxil Planar Transistor |
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Toshiba |
Silicon NPN Epitaxil Planar Transistor |
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Toshiba Semiconductor |
TRANSISTOR A, IB = 0 VCE = 2 V, IC = 50 mA VCE = 2 V, IC = 200 mA IC = 200 mA, IB = 10 mA VCE = 2 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Weight: 0.21 g (typ.) Min ¾ ¾ 80 70 40 ¾ 0.55 ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾ ¾ 100 10 Max 0.1 0.1 ¾ 240 |
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Toshiba Semiconductor |
PIN ASSIGNMENT |
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Toshiba Semiconductor |
PANEL CIRCUIT INDICATOR |
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Toshiba |
8-Bit Shift Register High speed: fmax = 150 MHz (typ.) at VCC = 5 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Power down protection is provided on all inputs. Balanced propagation delays: tpLH ∼− tpHL |
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Toshiba |
8-BIT SHIFT REGISTER • High speed: fmax = 150 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Power down protection is provided on all inputs. • Balanced propagation delays: tpLH ∼− tpHL |
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Toshiba |
8-Bit Shift Register |
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Toshiba Semiconductor |
2SC1678 |
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Toshiba Semiconductor |
8-Bit Shift Register • High speed: fmax = 170 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmissi |
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Toshiba Semiconductor |
8-BIT SHIFT REGISTER • High speed: fmax = 150 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Power down protection is provided on all inputs. • Balanced propagation delays: tpLH ∼− tpHL |
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Toshiba |
SYNCHROMOUS PRESETTABLE 4-BIT COUNTER • High speed: fmax = 185 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 µA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Power down protection is provided on all inputs. • Balanced propagation delays: tpLH ∼− tpHL |
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Desde 2024. D4U Semiconductor.
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