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2SC1626 |
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| Part Number | 2SC1626 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=80V Complementary to 2SA816. Unit in mm 10... |
| Features |
• High Breakdown Voltage : VCEO=80V Complementary to 2SA816. Unit in mm 10.3 MAX 0Z.6 ±0.2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RAINGS VCBO v CEO Vebo ic IE PC T.1 Tste 80 80 5 750 -750 1.5 150 -55M.50 UNIT V V V mA mA W °C °C 1. BASE Z. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC TO -230AB EIAJ TOSHIBA SC -46 2-10A1A Mounting Kit NO. AC75 Weight : 1 . 9g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARAC... |
| Document |
 2SC1626 Data Sheet
PDF 38.38KB |
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