Toshiba 2SC Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SC1815	Toshiba Semiconductor	Silicon NPN Transistor nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de
2	C2383	Toshiba Semiconductor	Silicon NPN Transistor (2SC2383) in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliabili
3	C2482	Toshiba Semiconductor	2SC2482
4	C2068	Toshiba Semiconductor	2SC2068 . High Voltage : VCE0=300V . Small Collector Output Capacitance : C ob=4.0pF (Max. MAXIMUM RATINGS (Ta=25°C; CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissip
5	C2235	Toshiba Semiconductor	2SC2235 iate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Fre
6	2SC5200	Toshiba Semiconductor	NPN TRANSISTOR solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report a
7	C5197	Toshiba Semiconductor	2SC5197 IC = 6 A, IB = 0.6 A VBE VCE = 5 V, IC = 4 A fT VCE = 5 V, IC = 1 A Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification R: 55 to 110, O: 80 to 160 JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.) Min Typ. Max Unit ― ― 5.0 µA
8	C5171	Toshiba Semiconductor	2SC5171 eliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Free Datashe
9	C2705	Toshiba Semiconductor	2SC2705 aximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estim
10	C1923	Toshiba Semiconductor	2SC1923 A (Note) Cre fT Cc･rbb’ NF Gpe VCE = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IE = -1 mA, f = 30 MHz VCE = 6 V, IE = -1 mA, f = 100 MHz, Figure 1 Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.0dB max) Min Typ. Max Unit
11	2SC5589	Toshiba Semiconductor	NPN TRANSISTOR Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) hFE (3) VCE (sat) VBE (sat) fT Cob tstg (1) tf (1) tstg (2) tf (2) VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1
12	2SC2655	Toshiba Semiconductor	Silicon NPN TRANSISTOR ficantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handlin
13	C5149	Toshiba Semiconductor	2SC5149
14	C5027	Toshiba Semiconductor	2SC5027
15	2SC3280	Toshiba	Silicon NPN Transistor . Complementary to 2SA1301 . Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 20.5MAX. 03.3±O.2 3^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Coll
16	C5387	Toshiba Semiconductor	2SC5387 conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept a
17	C3279	Toshiba Semiconductor	2SC3279 se breakdown voltage Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (1) DC current gain (Note 2) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB =
18	2SC2458	Toshiba Semiconductor	Silicon NPN Transistor equency Collector output capacitance Noise figure ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (Note) VCE = 6 V, IC = 2 mA VCE (sat) fT Cob NF (1) NF (2) IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE =
19	C5404	Toshiba Semiconductor	2SC5404
20	C735	Toshiba	2SC735