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Toshiba Semiconductor |
2SB1375 (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) |
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Toshiba |
2SB1457 reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Han |
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Toshiba |
2SB1016A lute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and e |
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Toshiba Semiconductor |
2SB1640 (sat) VBE fT Cob Test Condition VCB = −60 V, IE = 0 VEB = −7 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −2 A IC = −2 A, IB = −0.2 A VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −60 |
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Toshiba Semiconductor |
Silicon PNP Transistor dition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC = |
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Toshiba |
2SB1642 |
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Toshiba Semiconductor |
2SB1020A |
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Toshiba |
2SB1067 ility significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( |
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Toshiba |
Silicon PNP Transistor . Complementary to 2SD718. . Recommended for 45 ~50W auc io frequency amplif ier output stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Po |
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Toshiba Semiconductor |
Silicon PNP Transistor (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) |
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Toshiba Semiconductor |
2SB1429 |
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Toshiba |
2SB905 and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2006-11 |
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Toshiba Semiconductor |
Silicon PNP Transistor . Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em |
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Toshiba Semiconductor |
PNP Transistor and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2006-11 |
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Toshiba Semiconductor |
PNP Transistor |
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Toshiba |
Silicon PNP Transistor • High DC Current Gain : hFE=2000(Min. ) (VCE=-3V,I C=-3A) • Low Saturation Voltage : Vc E ( sa t)=-1.5V(Max. ) (Ic=-3A) • Complementary to 2SD633, 2SD634 and 2SD635. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. £to.6±0.2 MAXIMUM RATINGS (Ta=25°C) |
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Toshiba |
Silicon PNP Transistor • High DC Current Gain : hFE=2000(Min. ) (VCE=-3V,I C=-3A) • Low Saturation Voltage : Vc E ( sa t)=-1.5V(Max. ) (Ic=-3A) • Complementary to 2SD633, 2SD634 and 2SD635. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. £to.6±0.2 MAXIMUM RATINGS (Ta=25°C) |
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Toshiba |
SILICON PNP TRANSISTOR • Low Collector Saturation Voltage : VcE(sat)=-0.4V (Max.) at Ic=-4A • Complementray to 2SD553. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current |
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Toshiba |
SILICON PNP TRANSISTOR • Complementary to 2SD716. • Recommended for 30 ^ 35W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Collect |
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Toshiba |
SILICON PNP TRANSISTOR : • High DC Current Gain hFE ( 2 )=1000(Min.) (V CE=-2V, I C=-1A) Low Saturation Voltage : VCE (sat)=-1.5V(Max. ) (I C=-1A) Complementary to 2SD688. jZfo.45 05.08 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter |
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Desde 2024. D4U Semiconductor.
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