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2SB553 |
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| Part Number | 2SB553 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10.3 MAX. 3.6 ±0.2 FEATURES • Low Collector ... |
| Features |
• Low Collector Saturation Voltage : VcE(sat)=-0.4V (Max.) at Ic=-4A • Complementray to 2SD553. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Ta=25°C Dissipation Tc=25°C Junction Temperature Storage Temperature Range VCBO VCEO v EBO ic Tstg -70 -50 -5 -7 1.5 40 150 -55^150 V °C °C 1. BASE 2. COLLECTOR (HEAT SINK; 3. EMITTER JEDEC EIAJ TOSHIBA TO-220AB SC— 46 2— 10A1A ELECTRICAL CHARACTERISTICS CHARACTERISITC Collector Cut-off Current Emitter Cut-off Current Col... |
| Document |
 2SB553 Data Sheet
PDF 136.20KB |
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