2SB551 Datasheet. existencias, precio

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2SB551 SILICON POWER TRANSISTOR


2SB551
Part Number 2SB551
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INCHANGE
2SB551
Part Number 2SB551
Manufacturer INCHANGE
Title PNP Transistor
Description ·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Typ.)@IC= -2A ·High Power Dissipation- : PC= 25W(Max)@TC=55℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=2.
Features R)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V ICBO Collector Cutoff Current VCB= -20V; IE= 0 hFE-1 DC Current Gain IC= -1A; VCE= -4V hFE-2 DC Current Gain IC= -0.1A; VCE= -4V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V MIN TYP. MAX UNIT -50 V -50 .

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