| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Thinki Semiconductor |
N-Channel Trench Process Power MOSFET Transistor ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schemat |
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Thinki Semiconductor |
N-Channel Trench Power MOSFETs ● VDS=60V；ID=45A@ VGS=10V； RDS(ON)<7.5mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply G DS TO-251 Top View Schematic Diagram VDSS = 60 V IDS |
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Thinki Semiconductor |
N-Channel Type Power MOSFET ■ RDS(on) (Max 0.85 Ω )@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1. Gate { { 2. Drain ● ◀▲ ● ● { 3. Source BVDSS = 500V RDS(ON) = 0.85 ohm ID = 8.8A General Description This N-chan |
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Thinki Semiconductor |
N-Channel Type Power MOSFET ■ RDS(on) (Max 0.55 Ω )@VGS=10V ■ Gate Charge (Typical 48nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1. Gate { { 2. Drain ● ◀▲ ● ● { 3. Source BVDSS = 400V RDS(ON) = 0.55 ohm ID = 10A General Description This N-chann |
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Thinki Semiconductor |
N-Channel Type Power MOSFET ■ RDS(on) (Max 0.24 Ω )@VGS=10V ■ Gate Charge (Typical 130nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1. Gate { { 2. Drain ● ◀▲ ● ● { 3. Source BVDSS = 500V RDS(ON) = 0.24 ohm ID = 20A General Description This N-chan |
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Thinki Semiconductor |
N-Channel Type Power MOSFET ■ RDS(on) (Max 1 Ω )@VGS=10V ■ Gate Charge (Typical 32nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested IRF730PBF Pb 6.5A,400V Heatsink N-Channel Type Power MOSFET 1.Gate 2.Drain 3.Source BVDSS = 400V RDS(ON) = 1 ohm ID |
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Thinki Semiconductor |
N-Channel Type Power MOSFET ̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.Gate 2.Drain 3.Source BVDSS = 200V RDS(ON) = 0.4 ohm ID = 9A General Description This N-channel enhancement mode f |
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Thinki Semiconductor |
N-Channel Type Power MOSFET ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1. Gate { { 2. Drain ̻ ඔ̵ ̻ ̻ { 3. Source BVDSS = 500V RDS(ON) = 1.5 ohm ID = 5.0A General Description This N-chan |
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Thinki Semiconductor |
N-Channel Type Power MOSFET ̰ RDS(on) (Max 0.18 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.Gate 2.Drain 3.Source BVDSS = 200V RDS(ON) = 0.18 ohm ID = 18A General Description This N-channel enhancement mod |
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Desde 2024. D4U Semiconductor.
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