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Plastic-Encapsulated Diodes Power dissipation PD : 150 mW(Tamb=25℃) Forward Current IF : 100 m A Reverse Voltage VR: 80 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 2. 4 1. 3 Unit: mm 0. 4 Mar ki ng A3 ELEC |
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TRANSYS |
Plastic-Encapsulate Diodes z Small surface mounting type z High Speed z High reliability with high surge current handing capability Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Peak forward current Mea |
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Transys |
SWITCHING DIODE Power dissipation PD : 150 mW(Tamb=25℃) Forward Current IF: 100 m A Reverse Voltage VR: 80 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 2. 4 1. 3 Unit : mm 0. 4 Mar ki ng D3 ELEC |
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TRANSYS |
High Speed SWITCHING Diodes Small surface mounting type High Speed High reliability with high surge current handing capability SOD-723 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Peak forward current |
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Transys |
Schottky Diodes z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Symbol VRM VR IO IFSM Limits 45 |
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Transys |
High Speed SWITCHING Diodes Small package Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (10ms) Symbol VRM VR IFM IO Isurge Limits 85 80 200 10 |
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Transys |
SWITCHING DIODE z Small surface mounting type z High Speed z High reliability with high surge current handing capability SOT-323 1. ANODE 2. N.C. 3. CATHODE MAKING: F5 Unit:mm Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak r |
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High Speed Switching Diode z Small surface mounting type z High Speed z High reliability with high surge current handing capability MARKING: 6 Maximum Ratings and Electrical Characteristics, Single Diode @TA= 25℃ Parameter Peak reverse voltage DC reverse voltage Peak forward |
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TRANSYS |
Plastic-Encapsulated Diodes Power dissipation PD : 150 mW(Tamb=25℃) Forward Current IF : 100 m A Reverse Voltage VR: 80 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 2. 4 1. 3 Unit : mm 0. 4 Mar ki ng F3 ELE |
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Desde 2024. D4U Semiconductor.
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