1SS357 Transys Schottky Diodes Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

1SS357

Transys
1SS357
1SS357 1SS357
zoom Click to view a larger image
Part Number 1SS357
Manufacturer Transys
Description 1SS357 Schottky Diodes FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Me...
Features z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Symbol VRM VR IO IFSM Limits 45 40 0.1 1 Junction temperature Tj 125 Storage temperature Tstg -55~+125 Unit V V A A ℃ ℃ Electrical Ratings @TA=25℃ Parameter Symbol Min. Typ. Max. Unit Forward voltage Reverse current Capacitance between terminals VF IR CT 0.28 0.36 0.6 V 5 µA 25 pF Conditions IF=1mA IF=10mA IF=100mA VR=40V VR=0,f=1MHz ...

Document Datasheet 1SS357 Data Sheet
PDF 79.59KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 1SS350
Sanyo Semicon Device
Sillicon Epitaxial Schottky Barrier Diode Datasheet
2 1SS351
Sanyo Semicon Device
Sillicon Epitaxial Schottky Barrier Diode Datasheet
3 1SS351
ON Semiconductor
Schottky Barrier Diode Datasheet
4 1SS352
Toshiba Semiconductor
Silicon Epitaxial Planar Type Diode Datasheet
5 1SS352
Kexin
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE Datasheet
6 1SS352
SEMTECH
Silicon Epitaxial Planar Switching Diode Datasheet
More datasheet from Transys
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad