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PNP Transistor ....................................... 5 V IC Collector Current ........................................................................................................ 200mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICEX VCE(sat)1 VCE(sa |
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TGS |
PNP Transistor • High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................. |
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NPN Transistor ..........................................6 V IC Collector Current ........................................................................ .................................600mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) |
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Desde 2024. D4U Semiconductor.
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