| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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TGS |
Complementary Silicon Power Darlington Ttransistors VEB=5.0V, IC=0 Collector-Emitter Sustaining Voltage DC Current Gain VCEO hFE IC=50mA, IB=0 VCE=5V, IC=2.0A Collector-Emitter Saturation Voltage VCE(sat) IC=2.0A,IB=10mA Base-Emitter Saturation Voltage VBE(sat) IC=2.0A,IB=10mA Parallel-diode F |
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TGS |
Complementary Silicon Power Darlington Ttransistors VEB=5.0V, IC=0 Collector-Emitter Sustaining Voltage DC Current Gain VCEO hFE IC=50mA, IB=0 VCE=5V, IC=2.0A Collector-Emitter Saturation Voltage VCE(sat) IC=2.0A,IB=10mA Base-Emitter Saturation Voltage VBE(sat) IC=2.0A,IB=10mA Parallel-diode F |
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Desde 2024. D4U Semiconductor.
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