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BDX54F |
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| Part Number | BDX54F |
| Manufacturer | TGS |
| Description | The BDX53F are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifier... |
| Features |
VEB=5.0V, IC=0
Collector-Emitter Sustaining Voltage DC Current Gain
VCEO hFE
IC=50mA, IB=0 VCE=5V, IC=2.0A
Collector-Emitter Saturation Voltage VCE(sat) IC=2.0A,IB=10mA
Base-Emitter Saturation Voltage
VBE(sat) IC=2.0A,IB=10mA
Parallel-diode Forward Voltage
VF IF=2A
Min. — — — 160 500 — — —
Typ. — — — — — — — —
Max. Unit 0.2 mA 0.5 mA 2.0 mA —V — 2.0 V 2.5 V 2.5 V
... |
| Document |
 BDX54F Data Sheet
PDF 62.23KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BDX54 |
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| 2 | BDX54 |
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| 3 | BDX54 |
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| 4 | BDX54 |
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Desde 2024. D4U Semiconductor.
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