| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
TEMIC Semiconductors |
Quasi-Split-Sound Processing and AM-Demodulator D PLL intercarrier-mixer for all FM standards (incl. NICAM sound system) D High grade signal processing for FM/NICAM sound systems D Also suitable as AM-demodulator D Gain controlled wideband amplifier D AGC operates as a peak- and mean-level detecto |
|
|
|
|
TEMIC |
Dual N-Channel Enhancement-Mode MOSFET ent #70133. A SPICE Model data sheet is available for this product (FaxBack document #70516). Siliconix S-47958—Rev. G, 15-Apr-96 1 Si9945DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Static Gate Thresh |
|
|
|
|
TEMIC |
Photo Modules D Photo detector and preamplifier in one package D Output active low (active high modules: TFMT 5..9) D Internal filter for PCM frequency D High immunity against ambient light D Improved shielding against electric field disturbance D 5 Volt supply v |
|
|
|
|
TEMIC |
P-Channel Enhancement-Mode Transistor ck document #1490. Siliconix 1 P-37010—Rev. A, 06-Jun-94 2N6851 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State |
|
|
|
|
TEMIC |
Dual P-Channel Enhancement-Mode MOSFET st FaxBack document #1217. A SPICE Model data sheet is available for this product (FaxBack document #5109). Siliconix S-47958—Rev. G, 15-Apr-96 1 Si9948DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Stati |
|
|
|
|
TEMIC |
N-Channel Depletion-Mode MOSFET Transistors D D D D D High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Wit |
|
|
|
|
TEMIC |
N-Channel Depletion-Mode MOSFET Transistors D D D D D High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Wit |
|
|
|
|
TEMIC |
FM IF amplifier and demodulator D Input and demodulator provided for operating with ceramic-resonators D No selection of volume-input characteristics D Independent sound output for VTR and headphone Case: 14 pin dual inline plastic D Additional sound input D High ripple rejection D |
|
|
|
|
Temic |
N-Channel Enhancement Mode Transistor |
|
|
|
|
Temic |
P-Channel Enhancement Mode Transistors |
|
|
|
|
TEMIC |
N-Channel Enhancement-Mode Transistor arameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductan |
|
|
|
|
TEMIC |
Dual N-Channel Enhancement-Mode MOSFET 1-408-970-5600. Please request FaxBack document #1224. A SPICE Model data sheet is available for this product (FaxBack document #5116). Siliconix S-47958—Rev. G, 15-Apr-96 1 Si9959DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter |
|
|
|
|
TEMIC |
High-Frequency Switchmode Controller • 15- to 200-V Input Range • Current-Mode Control • Internal Start-Up Circuit Description The Si9114 is a BiC/DMOS current-mode pulse width modulation (PWM) controller IC for high-frequency dc/dc converters. Single-ended topologies (forward and flyba |
|
|
|
|
TEMIC |
N-Channel MOSFET t 0C;W 6-53 TEMIC MODIOOB/IOOC Specifications (TJ = 25°C Unless Otherwise Noted) Siliconix Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VOS(th) loss ZeIO Gate Voltage Drain CUrrent On |
|
|
|
|
TEMIC |
N-Channel MOSFET t 0C;W 6-53 TEMIC MODIOOB/IOOC Specifications (TJ = 25°C Unless Otherwise Noted) Siliconix Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VOS(th) loss ZeIO Gate Voltage Drain CUrrent On |
|
|
|
|
TEMIC |
N-Channel MOSFET C MOD200B/200C = Specifications (TJ 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS Vos = Ov, 10 = 250 JlA 200 Gate Threshold Voltage VOS(th) Vos - Vos. 10 - 250 rnA 2.0 G |
|
|
|
|
TEMIC |
N-Channel MOSFET C MOD200B/200C = Specifications (TJ 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS Vos = Ov, 10 = 250 JlA 200 Gate Threshold Voltage VOS(th) Vos - Vos. 10 - 250 rnA 2.0 G |
|
|
|
|
TEMIC |
N-Channel MOSFET 0.31 Unit 'CfW 6-61 TEMIC MOD400B/400C = Specifications (TJ 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS VGS = OV; 10 = 250 !lA 400 Gate Threshold Voltage VGS(tb) Vos |
|
|
|
|
TEMIC |
N-Channel MOSFET 0.31 Unit 'CfW 6-61 TEMIC MOD400B/400C = Specifications (TJ 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS VGS = OV; 10 = 250 !lA 400 Gate Threshold Voltage VGS(tb) Vos |
|
|
|
|
TEMIC |
N-Channel MOSFET 0B/500C Siliconix Specifications (TJ = 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS Vos = ov, In = 250 f1A 500 Gate Threshold Voltage VOS(tb) Vns = Vos, In = 250 mA 2.0 |
|
Desde 2024. D4U Semiconductor.
|