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MOD200C |
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| Part Number | MOD200C |
| Manufacturer | TEMIC |
| Description | TEMIC Siliconix MOD200B/200C Four N-Channel Enhancement-Mode Thansistors Product Summary V(BR)DSS (V) 200 rDS(on) (Q) 0.11 ID (A) 21 D D D S S Lcnclform Options G G G G MOD200B . .. B... |
| Features |
C
MOD200B/200C
= Specifications (TJ 25°C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Vos = Ov, 10 = 250 JlA
200
Gate Threshold Voltage
VOS(th)
Vos - Vos. 10 - 250 rnA
2.0
Gate-Body Leakage
loss
Vos=OV,Vos= ±20V
Zero Gate Voltage Drain Current
Vos -160V, Vos - OV loss
Vos = 160 V, Vos = 0 V, TJ = 125'C
On-State Drain Current'
IO(on)
Vos = 10 V, Vos = 10V
21
Drain-Source On-State Resistance"
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| Document |
 MOD200C Data Sheet
PDF 206.95KB |
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