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TEMIC |
N-Channel Transistor -May-94 2N7076 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb For |
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P-Channel Transistor dition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward 1tansconductanceb Dynatnic V(1IR)DSS VaS(tb) lass loss 10(on) ro |
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TEMIC |
N-Channel Transistor oltage V(BR)DSS VGS = Ov, 10 = 250 j.IA 400 Gate Threshold Voltage VGS(th) VDS = VGs. 10 = 250 j.IA 2.0 Gate-Body Leakage IGSS VDS = OV,VGS = ±20V Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Fo |
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TEMIC |
P-Channel Transistor 0-May-94 2N7079 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Fo |
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TEMIC |
N-Channel Transistor Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistanceb Dynamic V(BR)DSS VOS(th) loss loss roS(on) Vos = 0 Y, 10 = 1000 f.IA VOS = Vos, 10 = 250 jU\, TJ = -55'C Vos - Vos, 10 - 250 jU\, TJ - 25'C Vos = Vos, 10 = |
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TEMIC |
N-Channel Transistor ate-Body Leakage V(BR)DSS Vos = 0 V; 10 = 1000 !lA 100 Vos - Vos, 10 - 250 J.lA, TJ - -SS'C VOS(th)1 Vos = Vos,lo = 250 J.lA, TJ = 2S'C 2.0 Vos = Vos, 10 = 250 J.lA, TJ = 12S'C 1.0 Vos = OV;Vos= ±20V loss Vos - OV; Vos = ±20V; TJ - 12S'C Z |
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TEMIC |
N-Channel Transistor old Voltage Gate-Body Leakage V(BR)DSS VGS =Ov, In = 1000 !1A 200 Vns =VGs. In = 2S0 jlA, TJ = -SS ·C VGS(lh) Vns =VGs. In = 250 jlA, TJ = 2S ·C 2.0 Vns = VGs. In = 2S0 jlA, TJ = 12S ·C 1.0 Vns-OV,VGS- ±20V IGSS Vns - 0 V, VGS - ±20 V, TJ -l25 |
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TEMIC |
N-Channel Transistor old Voltage Gate-Body Leakage V(BR)DSS VGS =Ov, In = 1000 !1A 200 Vns =VGs. In = 2S0 jlA, TJ = -SS ·C VGS(lh) Vns =VGs. In = 250 jlA, TJ = 2S ·C 2.0 Vns = VGs. In = 2S0 jlA, TJ = 12S ·C 1.0 Vns-OV,VGS- ±20V IGSS Vns - 0 V, VGS - ±20 V, TJ -l25 |
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TEMIC |
N-Channel Transistor d Voltage V(BR)OSS VaS(tb) Gate-Body Leakage lass Zero Gate Voltage Drain Current loss Drain-Source On-State Resistanceb 1'])S(on) Dynamic Thtal Gate ChargeC Gate-Source ChargeC Gate-Drain ChargeC Thrn-On Delay TImec RiseTImec Thrn-Off Delay |
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TEMIC |
N-Channel Transistor d Voltage V(BR)OSS VaS(tb) Gate-Body Leakage lass Zero Gate Voltage Drain Current loss Drain-Source On-State Resistanceb 1'])S(on) Dynamic Thtal Gate ChargeC Gate-Source ChargeC Gate-Drain ChargeC Thrn-On Delay TImec RiseTImec Thrn-Off Delay |
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TEMIC |
N-Channel Transistor Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistanceb Dynamic V(BR)DSS VOS(th) loss loss roS(on) Vos = 0 Y, 10 = 1000 f.IA VOS = Vos, 10 = 250 jU\, TJ = -55'C Vos - Vos, 10 - 250 jU\, TJ - 25'C Vos = Vos, 10 = |
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TEMIC |
N-Channel Transistor wn Voltage V(BR)DSS Vas = OY, ID = 250 JlA 100 Gate Threshold Voltage Vas(tb) VDS - Vas. ID = 250 ~A 2.0 Gate-Body Leakage lass VDS = OY,Vas = ±20V Zero Gate Voltage Drain Current Vns = 80 Y, Vas - OV Inss Vns = 80 Y, Vas = 0 Y, T] = 12 |
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TEMIC |
N-Channel Transistor 2N7078 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Tr |
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TEMIC |
N-Channel Transistor Voltage V(BR)DSS VGS = Ov, In = 250 f'A 100 Gate Threshold Voltage VGS(th) Vns = VGS, In = 250 "A 2.0 Gate-Body Leakage IGSS Vns = OV,VGS = ±20V Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Ins |
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TEMIC |
N-Channel Transistor own Voltage V(BR)DSS = = VGS OV,ID 250 (!A 100 Gate 'Threshold Voltage VGS(tb) = = VDS VGs. ID 250 (!A 2.0 Gate-Body Leakage IGSS VDS-OV,VGS- ±20V Zero Gate Voltage Drain Current VDS =BOV, VGS =OV IDSS VDS =BO V, VGS =0 V, T1 =125'C On |
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TEMIC |
N-Channel Transistor BR)DSS VGS = Ov, 10 = 250 flA 200 Gate Threshold Voltage VGS(th) VOS = VGS, 10 = 250 flA 2.0 Gate-Body Leakage IGSS VOS= OV,VGS = ±20V Zero Gate Voltage Drain Current On-State Drain Currentb Vos = 160 V, VGS = OV loss Vos = 160 V, VGS = 0 |
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TEMIC |
P-Channel Transistor Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward 'Itansconductanceb V(BR)DSS VOS(th) loss IDSS ID(on) fDS(on) gr. Vos = ov, ID = -250 !1A VDS = VOS, I |
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TEMIC |
P-Channel Transistor wn Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward 1tansconductanceb V(BR)DSS VGS(tb) IGSS Inss In(on) rns(on) gf, vGS = 0 Y, In = -250 JlA Vns = VGS |
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TEMIC |
P-Channel Transistor Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward 'fransconductanceb Dynamic V(BRJDSS VaS(th) loss Inss In(on) rns(on) !lis Vas = 0 V, In = -250 !1A V |
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TEMIC |
N-Channel Transistor ate-Body Leakage V(BR)DSS Vos = 0 V; 10 = 1000 !lA 100 Vos - Vos, 10 - 250 J.lA, TJ - -SS'C VOS(th)1 Vos = Vos,lo = 250 J.lA, TJ = 2S'C 2.0 Vos = Vos, 10 = 250 J.lA, TJ = 12S'C 1.0 Vos = OV;Vos= ±20V loss Vos - OV; Vos = ±20V; TJ - 12S'C Z |
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Desde 2024. D4U Semiconductor.
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