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2N7079 |
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| Part Number | 2N7079 |
| Manufacturer | TEMIC |
| Description | P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –100 rDS(on) (W) 0.210 ID (A) –17 TO-254AA S Hermetic Package 2N7079 G Case Isolated DSG Top View D P-Channel MOSFET Abso... |
| Features |
0-May-94
2N7079
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Dynamic
Symbol
Test Condition
V(BR)DSS VGS(th)
IGSS
IDSS ID(on) rDS(on)
gfs
VGS = 0 V, ID = –250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –80 V, VGS = 0 V VDS = –80 V, VGS = 0 V, TJ = 125_C VDS = –10 V, VGS = –10 V VGS = –10 V, ID = –10.8 A VGS = –10 V, ID = –10.8 A, TJ = 125_C VDS = –15 V, ID = –10.8 A I... |
| Document |
 2N7079 Data Sheet
PDF 118.28KB |
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