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Aerosemi |
2A Synchronous Step-Down Converter High Efficiency: Up to 96% 600KHz Frequency Operation 2A Output Current No Schottky Diode Required 4.5V to 16V Input Voltage Range 0.6V Reference Slope Compensated Current Mode Control for Excellent Line and Load Transient Response In |
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Micron Technology |
NAND Flash Memory NAND Flash Memory MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4 MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size |
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CMOSTEK |
Low-Cost 300 - 960 MHz OOK Stand-Alone RF Receiver Embedded EEPROM Very Easy Development with RFPDK All Features Programmable Frequency Range 300 to 480 MHz (CMT2210A) 300 to 960 MHz (CMT2217A) Symbol Rate: 0.1 to 40 ksps Sensitivity: -113 dBm at 1 ksps, 0.1% BER Configurable Receiv |
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CMOSTEK |
240MHz - 960MHz Single Chip OOK Transmitter Build-in EEPROM Simplify the engineering development by using RFPDK All functions can be configured Working frequency：240 MHz ~960 MHz Symbol rate：0.5 - 40 kbps Output power：0 - +13 dBm Working current：5.5 mA @ +10 dBm Sleep current： |
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Micron Technology |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory MT28EW128ABA Features • Single-level cell (SLC) process technology • Density: 128Mb • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page |
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Micron Technology |
NAND Flash Memory NAND Flash Memory MT29F1G08ABADAWP, MT29F1G08ABBDAH4, MT29F1G08ABBDAHC, MT29F1G16ABBDAH4, MT29F1G16ABBDAHC, MT29F1G08ABADAH4 Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x |
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CMOSTEK |
240 - 960 MHz (G)FSK/OOK Transmitter Optional Chip Feature Configuration Schemes On-Line Registers Configuration Off-Line EEPROM Programming Frequency Range: 240 to 960 MHz FSK, GFSK and OOK Modulation Symbol Rate: 0.5 to 100 ksps (FSK/GFSK) 0.5 to 30 ksps (OOK) Deviat |
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CMOSTEK |
Low Power 315/433.92 MHz OOK Receiver Operation Frequency: 315 / 433.92 MHz OOK Demodulation Data Rate: 1.0 - 5.0 kbps Sensitivity: -109 dBm (3.0 kbps, 0.1％ BER) Receiver Bandwidth: 330 kHz Large Signal Handling: 10 dBm Stand-alone, No External MCU Control Required No Reg |
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MaxDetect |
Capacitive humidity sensor & Application: *Full range temperature compensated *0-3V DC output for humidity *Humidity Accuracy +-3.0%RH *Range 0 to 100% RH *Light weight, easy installation The outstanding accuracy of MM2001/MMT2001 over the entire range is based on very precis |
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Micron Technology |
MT29F16G08MAA NAND Flash Memory MT29F16G08MAAWP, MT29F32G08QAAWP, MT29F64G08TAAWP, MT29F16G08MAAC3, MT29F32G08RAAC3, MT29F64G08UAAC4, MT29F32G08RAAC6, MT29F64G08UAAC6, MT29F128G08WAAC6 Features • Open NAND Flash Interface (ONFI) 1.0 compliant • Multilevel cell ( |
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Mos-Tech Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor • –3.3 A, –20 V. RDS(ON) = 0.072 Ω @ VGS = –4.5 V RDS(ON) = 0.096Ω @ VGS = –2.5 V • Low gate charge (3.6 nC typical) • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -23 provides low RDS(ON) and 30% higher power handling ca |
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International Rectifier |
THREE PHASE BRIDGE Power Modules Universal, 3 way terminals: push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume ratio UL E 62320 approved Terminals Solderable as per MIL-STD-202 METHOD 208, solder: |
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Micron Technology |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory MT28EW01GABA Features • Single-level cell (SLC) process technology • Density: 1Gb • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page si |
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Aeroflex Circuit Technology |
ARINC629 RECEIVER TRANSMITTER taSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U |
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Micron Technology |
128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 32Mb or one 64Mb www.DataSheet4U.com CellularRAMÔ device • Basic configuration Flash Flexible multibank architecture 4 Meg x 16 Async/Page/Burst interface Support for tr |
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Micron Technology |
NAND Flash Memory NAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets Features • Organization • Page size x8: 2,112 bytes (2,048 + 64 bytes) • Page size x16: 1,056 |
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Micron Technology |
MT29F2G08AABWP NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features • Organization: • Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) www.Da |
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Micron Technology |
1Gb x1: SPI NAND Flash Memory NAND Flash Memory Serial Peripheral Interface (SPI) MT29F1G01AAADD Features • Single-level cell (SLC) technology • Organization – Page size x1: 2112 bytes (2048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2 planes x 512 block |
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AOSONG |
Temperature and humidity module ℃ 1mA typ max 80 ±0.5 60 ±0.25 0.1 ℃ ℃ µA ℃ Ω 、 ，，、，。 5 ， ， 5V。， 5 。 5： AM2001/AMT2001 。 min typ max 4.5 5.0 5.5 V 0 3V 1.5 mA 2.5 S 0 80 ℃ LM35 NTC10K 0 -40 80 ℃ 125 ℃ LM35 NTC10K 0 - 0.8 -- V - ： |
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InternationalRectifier |
THREE PHASE BRIDGE Universal, 3 way terminals: push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume ratio UL E 62320 approved Terminals Solderable as per MIL-STD-202 METHOD 208, solder: |
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Desde 2024. D4U Semiconductor.
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